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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
150 C
25 C
50
10
1
V GS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
50
10
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
o
o
-55 C
o
*Notes:
1. 250 μ s Pulse Test
2. T C = 25 C
0.1
0.1
1
o
10
1
3
4 5 6 7
8
V DS , Drain to Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.2
1.0
V GS , Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150 C
25 C
0.8
10
o
o
0.6
V GS = 10V
*Note: T C = 25 C
0.4
0.2
0
5
10 15 20 25
V GS = 20V
o
30
1
0.3
*Notes:
1. V GS = 0V
2. 250 μ s Pulse Test
0.6 0.9 1.2
1.5
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
10000
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
1000
C iss
8
V DS = 120V
V DS = 300V
V DS = 480V
100
10
*Note:
1. V GS = 0V
C oss
6
4
1
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
C rss
2
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1 10 100
1000
0
0
*Note: I D = 5A
9 18 27
36
V DS , Drain to Source Voltage [V]
Q g , Total Gate Charge [nC]
?2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
3
www.fairchildsemi.com
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